Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

For well-passivated semiconductor materials, the density of states (DOS) at the band edge determines the concentration of electrons (or holes) available to participate in photo/electrochemical redox and chemical reactions. Electrochemical impedance enables the characterization of photo-electrode DOS in a functional, in situ, electrochemical environment. However, the in situ electrochemical approach remains underutilized for band structure characterization of inorganic semiconductors. In this work, we demonstrate that the DOS of the well-passivated, highly ordered semiconductors silicon and germanium is directly probed by electrochemical impedance spectroscopy (EIS). More specifically, EIS measurements of the chemical capacitance in contact with electrolyte enable direct analysis of the DOS properties. From the capacitance-potential plot, the following parameters can be extracted: Fermi level, valence band maximum, conduction band minimum, and a quantitative value of the number of states at each potential. This study aims to establish the groundwork for future EIS investigations of electronically modified semiconductor interfaces with covalently bound organic molecules, organometallic catalysts, or more complex biorelated functionalizations.