High-speed low-noise InGaAs/InP PIN photodetectors on a Si platform achieved by oxygen plasma activation bonding

In this paper, we report the hydrophilic wafer bonding of a 2 in. InP-based InGaAs/InP epitaxial film to a SiO 2 /Si substrate using oxygen plasma surface activation. The fabricated vertical Si-based InGaAs/InP PIN photodetectors exhibit an exceptionally low surface leakage current of 2.32 nA/cm and a bulk leakage current of 37.47 nA/cm 2 at −1 V. The device with a diameter of 13 μm achieves a remarkable 3 dB bandwidth of 30.453 GHz. Furthermore, the 70 μm diameter device has a response rate of 0.87 A/W and 0.58 A/W at 1370 nm and 1660 nm, respectively.