氢氟酸
硅
电阻率和电导率
X射线光电子能谱
扩展阻力剖面
材料科学
分析化学(期刊)
带材弯曲
化学
光电子学
核磁共振
冶金
物理
色谱法
电气工程
工程类
作者
Minghao Li,Yun Liu,Tao Wei,Rongwang Dai,Zhongying Xue,Xing Wei
摘要
The effect of hydrofluoric acid (HF) treatment on the surface electrical properties was observed in high-resistivity bulk silicon by the spreading resistance profiling (SRP) technique. It is found that the near-surface resistivity decreased in n-type silicon and increased in p-type silicon after HF treatment according to the SRP measurement. The variation of surface chemical elements and energy bands of HF-treated n-type and p-type (100) silicon has been characterized by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements. The results indicate that the surface Fermi level is shifted toward the conduction band minimum after HF treatment. The surface energy band bending caused by the surface electronegative groups (–F and –OH) was investigated by the method of First-principles calculation. Based on these findings, a method combining the SRP measurement with HF treatment to determine the conduction type of high-resistivity silicon was proposed, which is critical for the development of high-resistivity CZ silicon crystal growth.
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