材料科学
氮化锆
硅
氮化硅
接触电阻
光电子学
图层(电子)
锆
电接点
氮化物
导电体
纳米技术
复合材料
冶金
氮化钛
作者
Juan Tian,Kai Xu,Guangwei Wang,Hongxu Jiang,Yuan Liu,Peng Zhu,Deliang Wang
摘要
Efficient carrier transport and suppressed interface recombination at back contact are essential for high-efficiency solar cells. Herein, we developed a zirconium nitride (ZrN) film with a low film resistivity of 1.6 × 10−4 Ω cm as an electron-selective contact for n-type silicon solar cells. Suitable band alignment of the n-Si/ZrN hetero-contact eliminates the interface barrier between Al and n-Si. Meanwhile, electrostatic potential induced by interfacial Si–O–Zr bonds assists electron extraction. The fill factor of devices has been significantly improved by incorporating a ZrN layer. After optimizing the thickness of ZrN and contact fraction, the champion ZrN-based device exhibited an efficiency of 19.7%, yielding a 23% enhancement compared with that without a ZrN interlayer.
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