单层
化学气相沉积
电子迁移率
场效应晶体管
材料科学
大气压力
拉曼散射
分析化学(期刊)
二硫化钼
光电子学
拉曼光谱
晶体管
化学
纳米技术
光学
复合材料
有机化学
物理
地质学
电压
海洋学
量子力学
作者
Xinke Liu,Jiazhu He,Qiang Liu,Dan Tang,Jiao Wen,Wenjun Liu,Wenjie Yu,Jing Wu,Zhubing He,Youming Lu,Deliang Zhu,Wenjun Liu,Peijiang Cao,Sun Woong Han,Kah‐Wee Ang
摘要
Large size monolayer Molybdenum disulphide (MoS2) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS2 field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm2V−1s−1 was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS2 FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature.
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