闪存
与非门
可扩展性
闪光灯(摄影)
可靠性(半导体)
非易失性随机存取存储器
计算机硬件
电荷陷阱闪光灯
计算机数据存储
赛道记忆
计算机科学
嵌入式系统
过程(计算)
电子工程
计算机存储器
半导体存储器
逻辑门
工程类
操作系统
交错存储器
内存刷新
视觉艺术
艺术
量子力学
功率(物理)
物理
作者
A. Nitayama,Hideaki Aochi
出处
期刊:ECS transactions
[Institute of Physics]
日期:2011-10-04
卷期号:41 (7): 15-25
被引量:29
摘要
We've developed Bit Cost Scalable (BiCS) flash technology as a three-dimensional memory for the future ultra high density storage devices, which extremely reduces the chip costs by vertically stacking memory arrays with punch and plug process. We've advanced it into Pipe-shaped BiCS flash memory introducing U-shaped NAND string structure, to improve operation window, speed and reliability. 32 G bit test chips with 16 stacked layers by 60nm P-BiCS flash process have been fabricated, and the functionality of Multi-Level-Cell (MLC) operation has been successfully demonstrated. P-BiCS is the most promising candidate of three-dimensional ultra high density data storage memories.
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