箔法
材料科学
基质(水族馆)
硅
曲率
非晶硅
薄膜
光电子学
无定形固体
覆盖
复合材料
光学
纳米技术
晶体硅
结晶学
计算机科学
几何学
化学
地质学
物理
海洋学
程序设计语言
数学
作者
Helena Glesková,I-Chun Cheng,S. Wagner,Zhigang Suo
出处
期刊:The Kluwer international series in electronic materials: science and technology
日期:2009-01-01
卷期号:: 29-51
被引量:5
标识
DOI:10.1007/978-0-387-74363-9_2
摘要
Flexible electronics will have inorganic devices grown at elevated temperatures on free-standing foil substrates. The thermal contraction mismatch between the substrate and the deposited device films, and the built-in stresses in these films, cause curving and a change in the in-plane dimensions of the workpiece. This change causes misalignment between the device layers. The thinner and more compliant the substrate, the larger the curvature and the misalignment. We model this situation with the theory of a bimetallic strip, which suggests that the misalignment can be minimized by tailoring the built-in stress introduced during film growth. Amorphous silicon thin-film transistors (a-Si:H TFTs) fabricated on stainless steel or polyimide (PI) (Kapton E®) foils need tensile built-in stress to compensate for the differential thermal contraction between the silicon films and the substrate. Experiments show that by varying the built-in stress in just one device layer, the gate silicon nitride (SiNx), one can reduce the misalignment between the source/drain and the gate levels from ∼400 parts-per-million to ∼100 parts-per-million.
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