磁电阻
材料科学
凝聚态物理
物理
磁场
量子力学
作者
Cundong Li,Bin-Bin Ruan,Qingxin Dong,Jianli Bai,Libo Zhang,Qiaoyu Liu,Jingwen Cheng,Pinyu Liu,Yu Huang,Yujie Sun,Zhi‐An Ren,Genfu Chen
标识
DOI:10.1088/1674-1056/add246
摘要
Abstract Magnetoresistance (MR) stands as a pivotal transport phenomenon within the realm of condensed matter physics. In recent years, materials exhibiting extremely large unsaturated magnetoresistance (XMR), which are often potential topological materials, have garnered significant attention. In this study, we synthesized single crystal of ZrBi 2 and performed electrical and specific heat measurements on them. The resistivity of ZrBi 2 displays metallic behavior with a high residual resistance ratio (RRR). Notably, the MR of ZrBi 2 reaches approximately 2.0 × 10 3 % at 2 K and 16 T without saturation. Weak Shubnikov-de Haas (SdH) oscillations with two frequencies were observed above 13.5 T, which correspond to 237 T and 663 T. Hall effect fitting yields nearly equal concentrations of electron and hole carriers with the concentrations approximately 10 21 cm -3 and the mobilities approximately 5000 cm 2 ·V -1 ·s -1 at 2 K. The XMR could be attributed to the compensation of electron-hole with high mobility.
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