放大器
电气工程
数学
拓扑(电路)
计算机科学
物理
CMOS芯片
工程类
作者
Mahesh Kumar Chaubey,Chih‐Cheng Lin,Yin‐Cheng Chang,Po‐Chang Wu,Hann-Huei Tsai,Shawn S. H. Hsu
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2024-03-18
卷期号:71 (5): 2504-2508
被引量:7
标识
DOI:10.1109/tcsii.2024.3378382
摘要
This brief presents a cryogenic inverter-based two-fold current reuse with a dual noise-canceling low-noise amplifier (LNA) in 40-nm CMOS. The proposed LNA consists of three stages: a current-reuse inverter-based input stage with shunt-resistive feedback and self-body bias (SBB) to mitigate the $V_{\mathrm{ th}}$ increase and boost $r_{\mathrm{ out}}$ under cryogenic temperature. The second stage is the dual auxiliary noise-canceling stage with an additional current reuse parallel transistor to enhance transconductance and suppress the noise of both the main amplifier and auxiliary amplifier. The last stage is a common-source post-amplifier for further gain enhancement. At 4 K, the LNA achieves a measured peak gain $(S_{21})$ of 31 dB, with a large 3-dB bandwidth from 10 MHz to 2.6 GHz and a minimum NF of 0.1 dB (corresponding to noise temperature $T_{N}$ of 6.8 K) at 0.6 GHz under power dissipation of 8.6 mW. The circuit occupies a core area of 0.117 mm2.
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