约瑟夫森效应
原子层沉积
拓扑(电路)
沉积(地质)
量子位元
沃罗诺图
铝
工作(物理)
制作
材料科学
量子
凝聚态物理
纳米技术
图层(电子)
物理
化学物理
超导电性
量子力学
几何学
电气工程
古生物学
病理
工程类
冶金
生物
医学
替代医学
数学
沉积物
作者
Chuanbing Han,Huihui Sun,Fudong Liu,Xiangju Zhao,Zheng Shan
出处
期刊:Entropy
[Multidisciplinary Digital Publishing Institute]
日期:2023-01-17
卷期号:25 (2): 182-182
摘要
Although the performance of qubits has been improved in recent years, the differences in the microscopic atomic structure of the Josephson junctions, the core devices prepared under different preparation conditions, are still underexplored. In this paper, the effects of the oxygen temperature and upper aluminum deposition rate on the topology of the barrier layer in the aluminum-based Josephson junctions have been presented by classical molecular dynamics simulations. We apply a Voronoi tessellation method to characterize the topology of the interface and central regions of the barrier layers. We find that when the oxygen temperature is 573 K and the upper aluminum deposition rate is 4 Å/ps, the barrier has the fewest atomic voids and the most closely arranged atoms. However, if only the atomic arrangement of the central region is considered, the optimal rate of the aluminum deposition is 8 Å/ps. This work provides microscopic guidance for the experimental preparation of Josephson junctions, which helps to improve the performance of qubits and accelerate the practical application of quantum computers.
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