能斯特方程
能斯特效应
拓扑(电路)
凝聚态物理
拓扑绝缘体
物理
相图
电导
相(物质)
材料科学
量子力学
数学
电极
组合数学
作者
Ning Yang,Jian-Min Zhang
出处
期刊:Physical review
日期:2024-01-18
卷期号:109 (3)
标识
DOI:10.1103/physrevb.109.035423
摘要
Higher-order topological properties of two-dimensional (2D) magnetic materials have recently been proposed. In 2D ferromagnetic Janus materials, we find that ScClI is a second-order topological insulator. Using the tight-binding approximation, we develop a multiorbital model that adequately describes the high-order topological states of ScClI. Further, we give the complete high-order topological phase diagram of ScClI, based on the external field modulation of the magnetovalley coupling and energy levels. The 2D ScClI has a pronounced valley polarization. This type of magnetovalleytronics results in different insulating phases to exhibit completely different anomalous Nernst conductance. Through valleytronics, we establish a link between the topological insulator and the valley Nernst effect, thus constructing an anomalous valley Nernst conductance map that corresponds to the topological phase diagram. We utilize the characteristics of valley electronics to link higher-order topological materials with the anomalous Nernst effect, which has potential implications for high-order topological insulators and valley electronics.
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