金属有机气相外延
铟
原位
材料科学
薄膜
光电子学
质量(理念)
外延
纳米技术
化学
物理
图层(电子)
有机化学
量子力学
作者
Yao Wang,Jiale Li,Tao Zhang,Wenkai Wu,Wenji Li,Yixin Yao,Zi Ming Wang,Qian Feng,Yachao Zhang,Jincheng Zhang,Yue Hao
摘要
This article innovatively uses pulsed metal-organic chemical vapor deposition technology to optimize the quality of β-Ga2O3 thin films on (−201) β-Ga2O3 homo-substrate using indium pulse-assisted technology. The results demonstrate that the pulsed indium-assisted method, when compared with the traditional indium-assisted method, effectively suppresses the desorption of Ga2O, enhances the flatness of the β-Ga2O3 film, and reduces the surface roughness from 34.8 to 0.98 nm. The optimized single crystalline β-Ga2O3 film was grown with pulsed-indium, and the full width at half maximum of x-ray diffraction rocking curve was 30.42 arc sec, smaller than that of the continuous indium β-Ga2O3 (56.1 arc sec). In combination with the x-ray photoelectron spectroscopy O1s split-peak fitting analysis, the relative content of oxygen vacancies in the film was significantly reduced by pulsed indium-assisted method. The Hall mobility of films assisted by pulsed-indium is approximately 14 times higher than that of films assisted by traditional indium. The pulsed indium technology provides an idea for homoepitaxial growth of high-quality β-Ga2O3 films.
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