High Temperature Resistant Solar‐Blind Ultraviolet Photosensor for Neuromorphic Computing and Cryptography

Abstract High‐temperature resistant solar‐blind optoelectronic synapse has a significant demand such as aerospace and fire warning, which integrates sensing and processing functions to realize complex functions like learning, recognition, and memory. However, developing such device remains a tremendous challenge. Herein, a two‐terminal GaO X solar‐blind optoelectronic synapse with high‐temperature working ability is proposed, and it is applied to neuromorphic computing and cryptography. Benefiting from the high internal gain, the device can detect the light intensity of nW cm −2 , displaying one of the best figures‐of‐merit in solar‐blind photodetectors. Furthermore, the device possesses remarkable image sensing and memorization ability because of its ultrasensitive light detection ability and prominent synapse performance resulting from large charge trapping states density. Simultaneously, the device shows undamped photodetection and synaptic performances even at 610 K, reflecting a high‐temperature endurance and a desired property for practical applications under harsh environment. Moreover, by constructing an artificial neural network, high‐precision recognition of handwritten digits are realized under 610 K. A photosynaptic array with 12 × 12 pixels is constructed, and it is applied in cryptography that enables simultaneous sensing and encryption in the same devices. This work is expected to drive the progress of Ga 2 O 3 in harsh environment.