Enhancing the Performance of GaN/InGaN MQW Solar Cells by the Piezoelectric Polarization Stress

AbstractThis paper analyzed the impact of piezoelectric polarization, external strain and temperature on the performance of GaN/InGaN Multi Quantum Well (MQW) solar cell structure with oriented N-face polarity. The main aim is to improve the performance of the investigated solar cell. Spontaneous polarization originates from the non-centro-symmetry of the crystal structure and is remained in changed. Also, the variation in the degree of piezoelectric polarization tends to be controlled by the strain relaxation. The results reveal that the open-circuit voltage and the conversion efficiency are enhanced with an external strain at temperatures condition. Indeed, the increase of temperature causes the degradation of the carriers transport collection in the InGaN/GaN heterostrucutre and the accumulation of defects in the crystalline structure of InGaN materials. In addition, at high temperature, leading to a reduction in FF and the efficiency values of the MQW structure. The obtained results allow us to provide a solution to improve the efficiency of the InGaN-MQW solar cell and to minimize the adverse effects of temperature under piezoelectric strain. This research not only numerically shows the effect of piezoelectric stress on the quantum structure device but also offers a great promise to maximize solar energy in the current energy revolution.KeywordsInGaNSolar cellsPhotovoltaic energyPiezoelectric polarization