部分位错
外延
Burgers向量
材料科学
位错
透射电子显微镜
基质(水族馆)
堆积
基面
凝聚态物理
结晶学
图层(电子)
光电子学
复合材料
化学
纳米技术
核磁共振
物理
地质学
海洋学
作者
Johji Nishio,Chiharu Ota,Ryosuke Iijima
摘要
Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations has been considered possible during epitaxial growth. The step-flow model was proposed to explain the conversion, in which an unexpandable 30° C-core partial dislocation in the substrate changes into an expandable 30° Si-core partial dislocation in the epitaxial grown layer. We observed this conversion experimentally by a transmission electron microscope and confirmed the core-species change by high-angle annular dark-field scanning transmission electron microscopy. In addition, other unexpandable combinations of partial dislocations were examined for the possibility of converting to expandable. As a result, the unexpandable basal plane dislocations with a Burgers vector of ±(1/3)[112¯0] in the substrate were confirmed to be a necessary condition for forming expandable 30° Si-core partial dislocations after epitaxial growth that could expand single Shockley-type stacking faults and degrade reliability of 4H-SiC power devices.
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