空位缺陷
密度泛函理论
化学计量学
晶体缺陷
肖特基缺陷
氪
Atom(片上系统)
弗伦克尔缺陷
原子物理学
电负性
氙气
化学
氮化物
材料科学
肖特基二极管
结晶学
计算化学
物理化学
纳米技术
物理
图层(电子)
有机化学
嵌入式系统
二极管
光电子学
计算机科学
作者
Lin Yang,Nikolas Kaltsoyannis
标识
DOI:10.1021/acs.jpcc.1c08523
摘要
Uranium nitride is a material of considerable fundamental interest and is a promising candidate for an advanced nuclear fuel. We here study intrinsic point defects and incorporation of the fission gas atoms Kr and Xe in UN by density functional theory, including the first report of the effects of non-stoichiometry. The defect formation energies of U and N vacancies are found to be highly dependent on stoichiometry. The most stable defect types are N vacancies under U-rich and near-stoichiometric conditions but U vacancies under N-rich conditions. The existence of a defect significantly affects the magnetic moment of UN, especially defects involving U vacancies. The incorporation of Kr and Xe in UN induces relaxation of the atomic positions of U and N atoms adjacent to Kr or Xe, with the displacement induced by Xe being more significant than that by Kr due to the larger atomic radius of the former. The calculated solution energy of Kr and Xe in a perfect UN supercell shows that the most energetically favorable sites are Schottky defects and U vacancies under U-rich and N-rich conditions, respectively. Under near-stoichiometric conditions, Kr and Xe behave differently, with the former preferring a U vacancy and the latter preferring the Schottky defect. Bader charge analysis indicates larger charge transfer to noble gases on Kr incorporation than on Xe incorporation, consistent with the higher electronegativity of Kr.
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