钝化
纳米结构
退火(玻璃)
硅
材料科学
晶体硅
无定形固体
异质结
非晶硅
外延
冶金
化学工程
光电子学
纳米技术
结晶学
化学
图层(电子)
工程类
作者
Bart Macco,Jimmy Melskens,Nikolas J. Podraza,Karsten Arts,Christopher W. Pugh,Owain Thomas,W. M. M. Kessels
摘要
Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier lifetime of ∼4 ms is demonstrated after a rapid thermal annealing treatment. Besides the excellent level of surface passivation, the main advantage of the low-temperature approach is the facile suppression of undesired epitaxial growth. The correlation between the a-Si:H nanostructure and the activation of a-Si:H/c-Si interface passivation, upon annealing, has been studied in detail. This yields a structural model that qualitatively describes the different processes that take place in the a-Si:H films during annealing. The presented experimental findings and insights can prove to be useful in the further development of very thin a-Si:H passivation layers for use in silicon heterojunction solar cells.
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