Cu-W Thin film characterized by surface fractal and resistivity

Thin films of Cu-W were deposited on Si wafers by magnetron sputtering,and characterized by atomic force microscopy(AFM).Power spectra density was used to calculate the fractal dimension of the AFM images.The results show that the fractal dimension values increase with the film thickness and there is a relationship between the fractal dimension and the resistivity of the films.The change of resistivity is directly proportional to the fractal dimension.