凝聚态物理
超级交换
磁矩
磁性
自旋电子学
铁磁性
物理
材料科学
作者
Houlong Zhuang,Richard G. Hennig
出处
期刊:Physical review
[American Physical Society]
日期:2016-02-26
卷期号:93 (5)
被引量:215
标识
DOI:10.1103/physrevb.93.054429
摘要
Single-layer transition metal dichalcogenides exhibit a variety of atomic structures and associated exotic electronic and magnetic properties. Density-functional calculations using the LDA+$U$ approximation show that single-layer ${\mathrm{VS}}_{2}$ is a strongly correlated material, where the stability, phonon spectra, and magnetic moments of the octahedral ($1T$) and the trigonal prismatic ($2H$) structures significantly depend on the effective Hubbard $U$ parameter, ${U}_{\mathrm{eff}}$. Comparison with the HSE06 hybrid density functional used as a benchmark indicates that ${U}_{\mathrm{eff}}=2.5$ eV, which consistently shows that the $2H$ structure is more stable than the $1T$ structure and a ferromagnetic semiconductor. The magnetic moments are localized on the V atoms and coupled ferromagnetically due to the superexchange interactions mediated by the S atoms. Calculations of the magnetic anisotropy show an easy plane for the magnetic moment. Assuming a classical $\mathit{XY}$ model with nearest neighbor coupling, we determine the critical temperature, ${T}_{\mathrm{c}}$, for the Berezinsky-Kosterlitz-Thouless transition of $2H$ single-layer ${\mathrm{VS}}_{2}$ to be about 90 K. Applying biaxial tensile strains can increase ${T}_{\mathrm{c}}$. Using Wannier interpolation, we evaluate the Berry curvature and anomalous Hall conductivity of $2H$ single-layer ${\mathrm{VS}}_{2}$. The coexistence of quasi-long-range ferromagnetic ordering and semiconducting behavior enables $2H$ single-layer ${\mathrm{VS}}_{2}$ to be a promising candidate for spintronics applications.
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