材料科学
场效应晶体管
光电子学
半导体
泄漏(经济)
晶体管
氧化物
电场
带材弯曲
电气工程
电压
物理
工程类
宏观经济学
经济
冶金
量子力学
作者
Kyoung Jin Choi,Jae Kyoung Moon,Min Park,Haechon Kim,Jong-Lam Lee
摘要
Effects of photowashing treatment on gate leakage current (IGD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of IGD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of IGD.
科研通智能强力驱动
Strongly Powered by AbleSci AI