Time-Dependent Simulations of Sub-Continuum Heat Generation Effects in Electronic Devices Using the Lattice Boltzmann Method

The lattice Boltzmann method (LBM), which accounts for electron-phonon scattering, is used to investigate heat generation effects on silicon-on-insulator (SOI) transistors. The wave nature of the LBM is shown and its influence on subcontinuum dynamics is discussed. The implementation of boundary conditions for constant temperature and constant heat flux is described. SOI devices are modeled as thin films in one dimension. The LBM simulation results for diffusive, transitional, and ballistic regimes are compared with Fourier equation solutions and literature results. For transitional and ballistic regimes, Fourier equation results underpredict the temperature levels obtained by the LBM, which is consistent with the findings previously reported by different authors.