光致发光
纳米线
材料科学
拉曼散射
外延
拉曼光谱
声子
激子
光电子学
化学气相沉积
散射
金属有机气相外延
声子散射
发光
图层(电子)
纳米技术
凝聚态物理
光学
热导率
物理
复合材料
作者
Hsin‐Ming Cheng,Hsu Cheng Hsu,Yung-Kuan Tseng,Li-Jiaun Lin,Wen‐Yuan Hsieh
摘要
Optical phonon confinement and efficient UV emission of ZnO nanowires were investigated in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality ZnO nanowires with diameters of 80-100 nm and lengths of several micrometers were epitaxially grown through a simple low-pressure vapor-phase deposition method at temperature 550 degrees C on the precoated GaN(0001) buffer layer. The increasing intensity ratio of n-order longitudinal optical (LO) phonon (A(1)(nLO)/E(1)(nLO)) with increasing scattering order in RRS reveals the phonon quantum confinement as shrinking the diameter of ZnO nanowires. The exciton-related recombination near the band-edge transition dominate the UV emissions at room temperature as well as at low temperature that exhibits almost no other nonstoichiometric defects in the ZnO nanowires.
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