Experiment of material removal un-uniformity in chemical mechanical polishing of silicon wafer

Chemical mechanical polishing(CMP) has become an operative and key technology in production of super-large-scale-integration to achieve complete planarization.One of the key points of CMP is material removal un-uniformity of the silicon wafer;it is a key factor of planarization required in integrated circuit production.The formula of calculating eliminating un-uniformity of the silicon wafer was first proposed in this article,CMP experiment was taken out on a CP-4 laboratory polishing machine,and thickness of the silicon wafer was highly precisely measured with WaferCheck-7200 produced by ADE Corp,USA.Material removal un-uniformity at different polishing speed was calculated and theory evidence was provided for understanding the formation and further revealing the mechanism of material removal un-uniformity of silicon wafer CMP.