CMOS芯片
电阻随机存取存储器
逻辑门
电子线路
非易失性存储器
电子工程
晶体管
电气工程
计算机科学
材料科学
电压
工程类
作者
Xunzhao Yin,Xiaoming Chen,Michael Niemier,Xiaobo Sharon Hu
出处
期刊:IEEE Transactions on Very Large Scale Integration Systems
[Institute of Electrical and Electronics Engineers]
日期:2019-01-01
卷期号:27 (1): 159-172
被引量:76
标识
DOI:10.1109/tvlsi.2018.2871119
摘要
Among the beyond-complementary metal-oxide- semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149×), ReRAM (1.7×), and CMOS (1.3×) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2×) and dynamic power (2.5×). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.
科研通智能强力驱动
Strongly Powered by AbleSci AI