异质结
雪崩光电二极管
光电子学
物理
材料科学
分析化学(期刊)
化学
探测器
光学
色谱法
作者
Zhenguang Shao,Xifeng Yang,Haifan You,D. J. Chen,Hai Lu,R. Zhang,Youdou Zheng,Kun Dong
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2017-04-01
卷期号:38 (4): 485-488
被引量:28
标识
DOI:10.1109/led.2017.2664079
摘要
A heterostructure multiplication region consisting of high/low-Al-content AlGaN layers instead of the conventional high-Al-content AlGaN homogeneous layer was proposed to increase the average hole ionization coefficient and to realize a higher gain in AlGaN avalanche photodiodes (APDs) based on separate absorption and multiplication structures. The fabricated APDs with the Al 0.2 Ga 0.8 N/Al 0.45 Ga 0.55 N heterostructure multiplication region exhibit very steep breakdowns and a maximum gain of $5.5\times 10^{4}$ at a reverse bias of 109 V. Meanwhile, the large potential barrier to the conduction band formed at the Al 0.2 Ga 0.8 N/Al 0.45 Ga 0.55 N heterostructure interface can suppress the electron-initiated multiplication, and hence, reduce the noise of the APDs by impeding the transport of electrons. The simulation of noise confirms this effect from the heterostructure.
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