响应度
材料科学
光电探测器
外延
光电子学
蓝宝石
暗电流
薄膜
兴奋剂
化学气相沉积
制作
退火(玻璃)
探测器
金属有机气相外延
光学
纳米技术
物理
激光器
冶金
病理
替代医学
图层(电子)
医学
作者
Fikadu Alema,B. Hertog,Oleg Ledyaev,Dmitry Volovik,Grant Thoma,Ross A. Miller,A. Osinsky,Partha Mukhopadhyay,Sara Bakhshi,Haider Ali,Winston V. Schoenfeld
标识
DOI:10.1002/pssa.201600688
摘要
We report on the fabrication and characterization of solar blind photodetectors (SBPs) based on undoped β‐Ga 2 O 3 and Zn doped (∼5 × 10 20 cm −3 ) β‐Ga 2 O 3 (ZnGaO) epitaxial films with cutoff wavelength of ∼260 nm. The epilayers were grown on c‐sapphire by the metal organic chemical vapor deposition technique and their structural, electrical and optical properties were characterized using various methods. As grown films have a large number of defects, resulting in detectors with enhanced internal gain, hence, high spectral responsivity >10 3 A/W. Post growth annealing in oxygen improved the quality of the epilayers, leading to detectors with reduced dark current (∼nA to ∼pA) and increased out of band rejection ratio. At 20 V bias, a ZnGaO detector showed a peak responsivity of 210 A/W (at 232 nm) and an out of band rejection ratio (i.e., R232 nm/R320 nm) of 5 × 10 4 . Alternatively, for a β‐Ga 2 O 3 detector these parameters were found to be five times and three times lower, respectively, suggesting that ZnGaO detectors have superior performance characteristics. These results provide a roadmap toward achieving high responsivity SBPs based on epitaxial ZnGaO films, laying a solid foundation for future applications.
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