InP-based balanced photodiodes heterogeneously integrated on SOI nano-waveguides

We demonstrate modified uni-traveling carrier balanced photodiodes (PDs) with top p-contact heterogeneously integrated on silicon-on-insulator (SOI) nano-waveguides. The photodiodes have low dark current and high bandwidth of 200 nA and 20 GHz, respectively. The common mode rejection ratio (CMRR) is 20 dB. The RF output power at 15 GHz of a single photodiode reaches 8.5 dBm at 25 mA and 3 V reverse bias.