Fabrication of (200)-Oriented TiN Films on Si (100) Substrates by DC Magnetron Sputtering

TiN films with (200) orientation were fabricated on single-crystal Si (100) substrates by dc magnetron sputtering method. We used HF solution to clean the Si substrates and achieved atomic smooth substrates with single-crystal surface. We deposited TiN films on the substrates with different sputtering conditions and observed that temperature can affect the quality of TiN films dramatically. Both X-ray diffraction and R-T measurement results show that the films deposited at a high temperature have a sharp (200) orientation and very high superconducting transition temperature of 5.4 K.