In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits

and carrier densities tunable over more than five orders of magnitude. Co-integration with n-type oxide transistors enables the fabrication of all-oxide CMOS circuits entirely at RT with robust logic functionality. This intrinsically regulated doping pathway provides a generalizable route to overcome long-standing bottlenecks in p-type oxides and advance oxide semiconductors toward large-area, flexible CMOS electronics.