材料科学
神经形态工程学
油藏计算
光电子学
纳米线
瞬态(计算机编程)
解耦(概率)
光学计算
电子工程
节点(物理)
计算机科学
非线性系统
硅纳米线
硅
全息术
探测器
可穿戴计算机
边缘计算
电压
电场
弯曲
物理系统
非线性光学
瞬态响应
GSM演进的增强数据速率
纳米技术
脉冲宽度调制
电子迁移率
电极
作者
S Wang,Lei Yan,Zongguang Liu,Xicheng Zhang,Minghao Wei,Yifei Zhang,Junzhuan Wang,Jun Xu,Linwei Yu
摘要
ABSTRACT Self‐powered optoelectronic devices with fast transient dynamics are attractive hardware platforms for physical reservoir computing (RC), while realizing high‐speed temporal optical signal processing in such systems remains challenging. Here, we demonstrate a flexible amorphous‐silicon (a‐Si) p‐i‐n radial‐junction silicon nanowires (RJ SiNWs) device that operates under zero bias and exhibits nonlinear, short‐lived transient photovoltage dynamics with sub‐millisecond relaxation, providing the fading‐memory behavior required for physical RC. The radial p‐i‐n architecture maintains efficient photocarrier separation via the built‐in electric field while geometrically decoupling optical absorption from carrier collection distance. Benefiting from the rapid temporal response, the RJ SiNWs node reliably encodes a 4‐bit optical pulse stream within only 200 µs. Combined with a nonlinear MLP readout, the resulting RC framework achieves a test accuracy of 94.1% in handwritten‐digit recognition. Furthermore, the device exhibits excellent mechanical durability enabled by the vertically anchored SiNWs architecture, retaining ∼90% of the saturated photovoltage after 3000 bending cycles at a radius of 10 mm, highlighting its suitability for wearable and conformal neuromorphic vision systems. This work establishes flexible a‐Si RJ SiNWs as a promising class of fast, self‐powered optoelectronic nodes for low‐power, in‐sensor edge neuromorphic systems.
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