三联结
太阳能电池
材料科学
光电子学
外延
砷化镓
选矿厂
基质(水族馆)
图层(电子)
光学
纳米技术
海洋学
物理
地质学
作者
Tatsuya Takamoto,T. Agui,Akitoshi Yoshida,Katsuya Nakaido,Hiroyuki Juso,Kazuaki Sasaki,Kazuyo Nakamora,Hiroshi Yamaguchi,Tomoya Kodama,Hidetoshi Washio,Mitsuru Imaizumi,Masato Takahashi
标识
DOI:10.1109/pvsc.2010.5616778
摘要
A world record-setting efficiency of 35.8% at AM1.5G (x1) has been demonstrated by an InGaP (1.88 eV)/GaAs/InGaAs (0.97 eV) triple-junction solar cell fabricated using the inverted layer transfer process. Lattice-matched top and middle cells are grown first. Then, a lattice-mismatched bottom cell is grown to attain good crystal quality for the top and middle cells. A large stress caused by the increasing lattice constant is successfully released in a buffer layer between the middle and bottom cells, and a high Voc close to Eg/q-0.4 V has been achieved for the lattice-mismatched InGaAs bottom cell. The high Voc of over 3.0 V contributed to the record efficiency. After epitaxial growth, the cell layers on the GaAs substrate are transferred on a handling substrate. As the cell layer is transferred onto a film substrate, a lightweight flexible cell can be fabricated. New triple-junction cells will be applied to a flexible module, called a “space solar sheet,” after optimization of the cell structure for the AM0 spectrum and radiation tolerance. A heat-resistant concentrator cell can be obtained by transferring the cell layer onto a heat sink substrate. A terrestrial concentrator cell using the new structure is also attractive, because a high efficiency of close to 45% can be expected.
科研通智能强力驱动
Strongly Powered by AbleSci AI