极紫外光刻
十字线
平版印刷术
光掩模
极端紫外线
光学
光刻
补偿(心理学)
抵抗
计算光刻
多重图案
邻近效应(电子束光刻)
校准
GSM演进的增强数据速率
材料科学
计算机科学
物理
光电子学
电子束光刻
纳米技术
激光器
人工智能
量子力学
薄脆饼
心理学
图层(电子)
精神分析
作者
Hua Song,Lena Zavyalova,Irene Su,James P. Shiely,Thomas Schmoeller
摘要
Extreme ultraviolet (EUV) lithography is one of the leading technologies for 16nm and smaller node device patterning. One patterning issue intrinsic to EUV lithography is the shadowing effect due to oblique illumination at the mask and mask absorber thickness. This effect can cause CD errors up to a few nanometers, consequently needs to be accounted for in OPC modeling and compensated accordingly in mask synthesis. Because of the dependence on the reticle field coordinates, shadowing effect is very different from the traditional optical and resist effects. It poses challenges to modeling, compensation, and verification that were not encountered in tradition optical lithography mask synthesis. In this paper, we present a systematic approach for shadowing effect modeling and model-based shadowing compensation. Edge based shadowing effect calculation with reticle and scan information is presented. Model calibration and mask synthesis flows are described. Numerical experiments are performed to demonstrate the effectiveness of the approach.
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