Operational and design considerations for broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition for high power applications

Graded barrier quantum well heterostructure (GBQWH) broad area lasers have been shown to be capable of high power pulsed and cw operation. In this article, we consider several operational characteristics and design issues associated with broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition. In particular, the effect of junction heating on emission wavelength for cw device operation and the effects of various buffer layer structures on the material properties and device characteristics of GBQWH structures are addressed. Typical results for high power operation of uncoated broad area laser diodes are also outlined.