纳米线
材料科学
蚀刻(微加工)
制作
硅
多孔硅
纳米结构
各向同性腐蚀
纳米技术
拉曼光谱
反应离子刻蚀
化学工程
多孔性
金属
硅纳米线
分析化学(期刊)
光电子学
复合材料
冶金
图层(电子)
光学
有机化学
化学
医学
替代医学
病理
物理
工程类
作者
Xiao Yao,Xiuhua Chen,Wenhui Ma,Shaoyuan Li,Yuping Li,Jiali He,Hui Zhang,Jiao Li
出处
期刊:International Journal of Materials Research
[De Gruyter]
日期:2015-04-14
卷期号:106 (4): 406-413
摘要
Abstract Large-area and oriented silicon nanowire arrays have been successfully fabricated through a two-step metal-assisted chemical etching process at room temperature. The effects of key fabrication parameters (AgNO 3 concentration, Fe(NO 3 ) 3 concentration, and etching time) on the silicon nanowire nanostructure were carefully investigated. The Raman spectra of silicon nanowires prepared under different etching times have been recorded and analyzed. The porosity and length of the nanowire increases with the increase in AgNO 3 concentration from 0.002 mol L −1 to 0.1 mol L −1 , which indicates that the re-dissolved Ag + ions would work as the main oxidative species and catalyze the vertical and lateral etching of nanowires, leading to silicon nanowire growth and porous structure formation.
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