发光二极管
光电子学
材料科学
兴奋剂
二极管
宽禁带半导体
可见光通信
绿灯
极化(电化学)
光学
物理
化学
蓝光
物理化学
作者
Zhen Huang,Renchun Tao,Duo Li,Zexing Yuan,Tai Li,Zhaoying Chen,Ye Yuan,Junjie Kang,Zhiwen Liang,Qi Wang,Pengfei Tian,Bo Shen,Xinqiang Wang
摘要
As one of the most promising candidates for signal carrier sources in visible light communication, GaN-based green micro-light emitting diodes (μ-LEDs) exhibit a limited modulation bandwidth. In this work, we propose an approach to accelerate carrier recombination rate in green μ-LEDs and, thus, improve the modulation bandwidth by enhancing p-type conductivity to allow more efficient hole injection into an active region. The polarization-induced p-type doping with graded AlGaN enhances the p-type layer conductivity to 2.5 × 10−2 S/m, which is about 4 times in magnitude higher than that of the conventional p-type GaN layer (0.6 × 10−2 S/m). 16 × 16 green μ-LEDs arrays using such graded p-AlGaN exhibit a light output power of 4.4 mW and a modulation bandwidth of 130 MHz, both showing an improvement of about 45% as compared with the ones using a pure p-GaN layer. The polarization-induced p-type doping in graded AlGaN would accelerate the application of GaN-based μ-LEDs in visible light communication.
科研通智能强力驱动
Strongly Powered by AbleSci AI