材料科学
纳米尺度
神经形态工程学
无定形固体
薄膜
原子力显微镜
纳米技术
脉冲激光沉积
导电原子力显微镜
离子
光电子学
记忆电阻器
热传导
电阻式触摸屏
表面光洁度
凝聚态物理
复合材料
结晶学
化学
电气工程
工程类
物理
机器学习
有机化学
人工神经网络
计算机科学
作者
Atsushi Tsurumaki-Fukuchi,Takayoshi Katase,Hiromichi Ohta,Masashi Arita,Yasuo Takahashi
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2021-10-01
卷期号:104 (4): 93-101
标识
DOI:10.1149/10404.0093ecst
摘要
Stable operations as resistive switching memory were demonstrated in amorphous TaOx (a-TaOx) thin films with very flat surfaces by conductive atomic force microscopy (c-AFM). The a-TaOx thin films fabricated on glass and Nb-doped SrTiO3 substrates by pulsed laser deposition showed high surface flatness with root-mean-square roughness of less than 0.2 nm. The c-AFM observations on the surfaces revealed that the resistive switching in a-TaOx causes almost no change in the topographic structures, and the significant structural deformation appears after the electrical breakdown by longer-range migration of the constituent ions. The possible mechanisms of the resistive switching phenomena were discussed based on the changes in the topographic structures and conduction states.
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