Industrial TCAD: Modeling Atoms to Chips

The objective of this work is to briefly illustrate the breadth of problems industrial technology computer aided design (TCAD) departments are expected to address when supporting modern semiconductor process development, focusing on two important trends. The first is the incredible expansion of the simulation domain both downward to atomic dimensions and upward to the very large-scale die-level simulations needed for product design. The second trend is the continuing necessity of using computational efficient continuum approaches, fortified with more physically rigorous methods, to meet both accuracy and wall-clock time requirements of industrial process development. Both of these trends will be illustrated with applications work done at Intel.