神经形态工程学
记忆电阻器
材料科学
纳米技术
计算机体系结构
计算机科学
工程类
电子工程
人工智能
人工神经网络
作者
Taehwan Moon,Keunho Soh,Jong Sung Kim,Ji Eun Kim,Suk Yeop Chun,Kyungjune Cho,J. Joshua Yang,Jung Ho Yoon
出处
期刊:Materials horizons
[Royal Society of Chemistry]
日期:2024-01-01
卷期号:11 (20): 4840-4866
被引量:9
摘要
This review explores various mechanisms enabling threshold switching in volatile memristors and introduces recent progress in the implementation of neuromorphic computing systems based on these mechanisms.
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