材料科学
退火(玻璃)
分析化学(期刊)
铟
薄膜
扫描电子显微镜
光致发光
结晶
接受者
溅射沉积
四方晶系
溅射
化学工程
结晶学
晶体结构
化学
冶金
纳米技术
复合材料
光电子学
物理
工程类
色谱法
凝聚态物理
作者
N. Akçay,Berkcan ERENLER,Yunus ÖZEN,В. Ф. Гременок,Konstantin Pavlovich BUSKIS,Süleyman Özçelik
出处
期刊:Gazi university journal of science
[Gazi University Journal of Science]
日期:2023-09-01
卷期号:36 (3): 1351-1367
标识
DOI:10.35378/gujs.1075405
摘要
Indium sulfide films were deposited by radio frequency magnetron sputtering technique on soda lime glass substrate. The deposition was conducted at the temperature of 150 °C and prepared films were then thermally annealed under argon atmosphere at 350 °C and 450 °C for 30 min. The impact of post-thermal annealing treatment on the properties of the films was investigated. From X-ray diffraction analysis, the formation of the stable tetragonal β-In2S3 crystal structure was substantiated and revealed that the thermal annealing treatment at 450 °C improved the crystallization of the films. The change in surface topographies and morphologies of the films depending on the post-thermal annealing process were examined by atomic force microscopy and scanning electron microscopy techniques, respectively. The stoichiometric ratio of constituent elements in the films was obtained by elemental analysis and it was seen that the films had slightly sulfur (S) deficit composition. It was found that the concentration of S slightly increased with the thermal annealing process. The room temperature photoluminescence spectra revealed that the films included vacancies of sulfur (VS: donor) and indium (In) (VIn: acceptor), indium interstitial (Ini: donor) and oxygen (O) in vacancy of sulfur (OVs: acceptor) defects with strong and broad emission bands at around 1.70, 2.20, and 2.71 eV.
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