光探测
材料科学
化学气相沉积
光电探测器
光电子学
带隙
Crystal(编程语言)
钝化
纳米技术
图层(电子)
计算机科学
程序设计语言
作者
Keyu Chen,Guan Yu Chen,Xinyi Hu,Hao Wu,Mingwei Gu,Yange Luan,Baoyue Zhang,Yihong Hu,Yinfen Cheng,Tao Tang,Haibo Huang,Liguo Chen,Jian Zhen Ou
标识
DOI:10.1002/admi.202300732
摘要
Abstract Few rare‐earth (RE) atoms incorporated in lattice greatly tunned the optical, electrical, magnetic, and catalytic performance of doped crystal through the peculiar atomic electron structure of RE. The dimensionality scale‐down of RE oxides can further promote their unique traits and broaden their applications. The UV photodetection performance of (111) oriented CeO 2 thin film is limited by the existence of grain boundaries, defects, and strains. Consequently, single‐crystal 2D CeO 2 is promising for photodetection as it lacks of grain boundaries and defects. However, the synthesis of large‐sized high‐quality 2D CeO 2 with lateral dimensions over 100 µm is challenging. In this work, a 3.9 nm thick CeO 2 single crystal with 120 µm lateral size is synthesized over a sapphire substrate through a salt‐assisted chemical vapor deposition method, in which an intermediate insulating CeAlO 3 layer is formed between the substrate and 2D CeO 2 to enhance the crystal lattice matching and therefore facilitates the large area growth. The photodetector based on 2D CeO 2 exhibits a photo response from 395 to 532 nm, possibly ascribed to a micro‐strain narrowed bandgap induced at the heterointerface. The photoresponsivity reaches 43.6 A W −1 while the detectivity reaches 7.58 × 10 11 Jones under the 395 nm laser irradiation. Besides, the sub‐ms switching kinetics is achieved without gating bias, which is significantly improved over other reported RE oxides‐based photodetectors. This work demonstrates the possibility of the synthesis of large‐size high‐quality 2D RE oxides and their strong potential in high‐performance optoelectronic devices.
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