十字线
空白
极紫外光刻
计算机科学
计量学
坐标系
过程(计算)
光掩模
人工智能
光学
计算机视觉
薄脆饼
工程类
材料科学
抵抗
机械工程
图层(电子)
物理
纳米技术
操作系统
作者
Pavlo Portnichenko,Ferhat Oezdogan,Lamia Dawahre,Oliver Lohse,Bill Kalsbeck,Priyank Jain,Hendrik Steigerwald,Sharif Ismail,Frank Laske
摘要
In this paper we introduce a method of combining the use of the KLA FlashScan® reticle blank defect inspection system and the KLA LMS IPRO reticle pattern registration metrology system for high-precision mask defect inspection and registration. We investigated EUV mask blanks at various production stages and confirmed the reliable measurement of defect coordinates, which propagate through the multilayer stack towards the surface as well as after the absorber deposition process. During the inspection, in addition to the categorization among various types and sizes of blank defects, unique alignment marks were also placed on the mask. These alignment marks allowed us to use a defined coordinate system, enabling reliable and accurate registration of the defect location even on blank substrates. If the mask shop requires EUV defect coordinates in their own internal coordinate system, matching between the mask shop and blank coordinate systems is achieved by measuring both alignment mark pairs and applying the appropriate coordinate transformation. The combined use of inspection and metrology systems proved to be a cost-effective solution for the development of a defect mitigation strategy with automatic workflow for EUV mask shops and mask blank suppliers.
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