卤化物
钙钛矿(结构)
介电谱
活化能
活动层
离子
扩散
热稳定性
材料科学
分析化学(期刊)
化学
化学物理
图层(电子)
无机化学
结晶学
物理化学
纳米技术
热力学
电化学
电极
有机化学
物理
薄膜晶体管
作者
María del Carmen López González,Gonzalo del Pozo,B. Arredondo,Silvia Delgado,Diego Martín-Martín,Marina García-Pardo,B. Romero
标识
DOI:10.1016/j.orgel.2023.106843
摘要
In our study, we show that compositional engineering of the “A” site cation of ABX3 perovskite structure formed by a mix of organic and inorganic cations is an effective route to improve the thermal stability of perovskite solar cells (PSCs). In this work, mixed-cation mixed-halide PSCs have been fabricated and characterized with temperature, from 253 up to 333 K. The active layer based on CsRbFAMAPb(IBr)3 results in a more stable device compared to standard MAPbI3 devices. Electrical characterization reveals a decrease of the solar cell parameters with temperature. Using Impedance Spectroscopy (IS) characterization, we have estimated an activation energy for the halide ion migration of 0.63 ± 0.08 eV, an ion diffusion coefficient of 10−14 cm2 s−1, and a defect density of 7.27·1015 cm−3. To our knowledge, this is the first time that these parameters have been calculated in CsRbFAMAPb(IBr)3 based devices, resulting in improved values compared to MAPbI3 devices. The worsening of device performance for temperatures above 300 K is attributed to a decrease of the spiro-OMeTAD conductivity and the degradation of the perovskite/spiro-OMeTAD interface. It is shown that for low temperatures (from 253 to 323 K), Shockley-Red-Hall (SRH) recombination in the bulk governs, while for temperatures above 323 K the increase in surface recombination becomes dominant due to the presence of non-selective contacts. Numerical simulations using SILVACO ATLAS corroborate the role of SRH in the perovskite active layer for low and medium temperatures, and the crucial influence of spiro-OMeTAD transport properties in the device performance parameters.
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