SPICE Modeling and Characterization of Filament Formation Perovskite Memristors

Memristors have gained considerable interest in the electronics design community for their switching and nonvolatile storage capabilities. Here, hybrid perovskite materials are prime candidates for implementation of these devices as they are earth-abundant, printable semiconductors which can rival in performance established materials such as silicon when employed in photovoltaics. Recently, they have also been used to implement memristor-type devices taking advantage of their `anomalous' hysteresis behavior, where the resistance of the device can be directly modulated through the application of a bias. This effect is typically attributed to the migration of ions through the material, which results in the formation of `conductive filaments' that can be switched at will. As the study of perovskite memristors progresses, it is essential to have a toolset for designing and testing circuits composed of such devices which are not currently available for medium and large scale circuit design and simulation. In this paper, we thus introduce a SPICE model that incorporates the behavior of perovskite memristors. Using extensive transient simulations, we study their operation with different device parameters. We further show that our model is capable of emulating resistive state changes of real world memristors.