碲化铋
MXenes公司
热电效应
材料科学
热电材料
铋
复合数
光电子学
纳米技术
冶金
复合材料
热导率
热力学
物理
作者
Vaskuri C. S. Theja,Vaithinathan Karthikeyan,Dani S. Assi,Hui‐Pi Huang,K. Venkatramanan,Yue Chen,C.H. Shek,Vellaisamy A. L. Roy
标识
DOI:10.1002/admt.202301722
摘要
Abstract Graphene analog MXenes are the best options for interface engineering traditional thermoelectric materials. For the first time, a composite‐engineered TEG device composed of heavily doped bismuth and antimony telluride with incorporated Ti 3 C 2 T x (MXene) nanoflakes is developed. Incorporated MXenes improved the electrical conductivity by carrier injection and reduces thermal conductivity by interfacial phonon scattering in both composites. The fabricated composite TEG device resulted in a maximum power of 1.14 mW and a power density of 6.1 mWcm −2 . The fabricated composite TEG also demonstrates strong power generation stability and durability. Added MXenes improve the mechanical stability by employing a dispersion‐strengthening mechanism. Conclusively, the developed composite‐engineered TEG device is a facile and efficiency‐improving option for next‐generation bismuth telluride‐based commercial TEG devices.
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