光电流
检出限
材料科学
纳米复合材料
半导体
适体
线性范围
异质结
纳米技术
黄曲霉毒素
带隙
蚀刻(微加工)
光电子学
空位缺陷
化学
色谱法
生物
遗传学
食品科学
图层(电子)
结晶学
作者
Jing Qian,Yue Liu,Haining Cui,Fuheng You,Huamin Yang,Kun Wang,Jie Wei,Lingliang Long,Chengquan Wang
标识
DOI:10.1016/j.snb.2023.135195
摘要
Aflatoxin B1 (AFB1) has been categorized as group I potent carcinogen to human. Therefore, sensitive detection of AFB1 is of great significance for food safety. Here, a sensitive photoelectrochemical (PEC) aptasensor for AFB1 detection has been developed based on the incorporation of ZnIn2S4 semiconductors with S-vacancy engineered MoS2 (V-MoS2) nanosheets. V-MoS2 nanosheets were obtained by a mild H2O2-mediated chemical etching strategy with varying etching time. ZnIn2S4/V-MoS2 nanocomposites were prepared by a solvothermal method using V-MoS2 as one of the starting materials. Research demonstrated that the incorporation of ZnIn2S4 semiconductors with V-MoS2 could produce ZnIn2S4/V-MoS2 nanocomposites having a broader light absorption range and narrower energy bandgap, which help to generate a larger and highly stable PEC responses. The photocurrent intensity was 3.2 and 5.6 times greater than ZnIn2S4/MoS2 and ZnIn2S4, respectively. Based on the top performing ZnIn2S4/V-MoS2 nanocomposites and the specific aptamer, a PEC aptasensor was successfully constructed for AFB1 detection with a wide linear range of 0.05-50 ng/mL and a low detection limit of 17 pg/mL (S/N=3). The significance of this work lied not only in representing substantive progress in food safety monitoring, but also in promoting the design of more efficient ZnIn2S4 or V-MoS2-related heterostructures for PEC sensors.
科研通智能强力驱动
Strongly Powered by AbleSci AI