材料科学
光电流
肖特基势垒
光电子学
探测器
压电
极化(电化学)
半导体
钙钛矿(结构)
肖特基二极管
电介质
暗电流
光电探测器
纳米技术
光学
复合材料
物理
化学
物理化学
二极管
化学工程
工程类
作者
Yecheng Ding,Xuefeng Zhao,Zeen Zhao,Z. B. Yan,Guoliang Yuan,Jun‐Ming Liu
标识
DOI:10.1002/adom.202301733
摘要
Abstract The MAPbBr 3 halide perovskite with a cubic paraelectric phase exhibits excellent semiconductor properties. Here, an interfacial polarization ( P in ) at the ITO/MAPbBr 3 Schottky junction can largely enhance photovoltaic current and be applied in the light and force multifunctional detector. An external force can alter the P in and increase the photocurrent of the ITO/MAPbBr 3 /spiro‐OMeTAD/ITO detector, and a 1 N force increases the short‐circuit photocurrent by 120%. Furthermore, the ITO/MAPbBr 3 /ITO structure with one ITO surface in light and another ITO surface in dark exhibits an equivalent piezoelectric coefficient ( d 33 ) of up to 83 pC N −1 since the P in and the corresponding photovoltaic current dynamically change with periodic external force. The light and force multifunctional detectors will promote the development and blend of optoelectronic devices and MEMS.
科研通智能强力驱动
Strongly Powered by AbleSci AI