材料科学
光探测
异质结
光电子学
钙钛矿(结构)
外延
卤化物
三碘化物
氧化物
二极管
单晶硅
结晶度
薄膜
光电探测器
纳米技术
结晶学
无机化学
硅
化学
物理化学
复合材料
冶金
电解质
图层(电子)
色素敏化染料
电极
作者
Songlong Liu,Yang Chen,Weiqi Gao,Wanying Li,Xiaokun Yang,Zhiwei Li,Zhaojing Xiao,Yuan Liu,Yiliu Wang
标识
DOI:10.1002/adma.202303544
摘要
Perovskite heterojunctions are essential components of perovskite optoelectronics, but their construction and investigation have been impeded by the instability and severe anion interdiffusion. This work epitaxially deposits p-type CsPbBr3 on n-type Nb:SrTiO3 (STO) to construct a functional perovskite heterojunction with high stability. The lattice match allows epitaxial growth of CsPbBr3 to occur over large scale, resulting in a monocrystalline thin film with excellent crystallinity and uniformity. The highly stable STO prevents the anion migration frequently happening in halide perovskites, forming a sharp interface of two perovskite with opposite conduction type, with which a diode is fabricated and a current rectification ratio of 374 is obtained. The diode is able to work as a photodetector with dark current of 2.01 × 10-12 A at -1 V and responsivity (R) of 8.26 A W-1 , rendering a detectivity (D*) of 2.98 × 1013 Jones. Owing to the all-inorganic architecture, effective photoresponse at temperature as high as 150 °C is guaranteed with D* of ≈1.52 × 1013 Jones. Combining the unique optoelectrical properties of halide perovskite and the rigidity of oxide perovskite, the epitaxy of CsPbBr3 on n-type STO opens up a new method to construct functional perovskite heterojunction for optoelectronics.
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