金属有机气相外延
化学气相沉积
蓝宝石
成核
增长率
材料科学
外延
分析化学(期刊)
基质(水族馆)
化学
结晶学
光电子学
纳米技术
光学
图层(电子)
激光器
物理
地质学
有机化学
海洋学
色谱法
数学
几何学
作者
Ray–Hua Horng,Dong−Sing Wuu,Po−Liang Liu,Apoorva Sood,Fu-Gow Tarntair,Yu-Hsuan Chen,Singh Jitendra Pratap,Ching-Lien Hsiao
标识
DOI:10.1016/j.mtadv.2022.100320
摘要
In this study, monoclinic gallium oxide (β-Ga2O3) epilayer was successfully grown on c-plane, (0001), sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with interplaying growth temperature, TEGa flow rate, and growth time. X-ray diffraction 2θ scans show only three narrow diffraction peaks referred to β-Ga2O3(2¯ 01), (4¯ 02), and (6¯ 03) in all epilayers, indicating a superior crystalline quality. Current-voltage (I–V) measurement reveals that these β-Ga2O3 films are insulating and exhibit high resistance in a range of 1012–1014 Ω. The crystallization characteristics of the epilayers can be effectively improved with thickness through increasing TEGa flow rate and growth time, which was evidenced by X-ray rocking curves and I–V measurements. However, the surface roughness of β-Ga2O3 film increases with growth time and TEGa flow rate. When the growth temperature increases above 825 °C, the thickness of β-Ga2O3 film decreases clearly. Furthermore, it can be found that the growth rate decreased as the growth time increasing. The growth mechanism based on first-principles calculation was proposed as that 3D growth induced by the lattice mismatch between β-Ga2O3 and sapphire starts at nucleation stage, and follows up a lateral growth promoting a 2D growth after the thick epilayer being grown. In addition, the complex chemical reaction between TEGa and oxygen precursors was unraveled by density function theory calculation.
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