AMOLED公司
薄膜晶体管
有机发光二极管
晶体管
材料科学
光电子学
阈值电压
电子线路
有源矩阵
电气工程
电压
纳米技术
图层(电子)
工程类
作者
Shicheng Huang,Jun Jin,Jaekyun Kim,Wei Wu,Aimin Song,Jiaye Zhang
标识
DOI:10.1109/ted.2023.3274501
摘要
Maintaining good stability of the threshold voltage in the driving transistor is very important for active-matrix organic light emitting diode (AMOLED) pixel circuits. In this work, both indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) and IGZO source-gated transistor (SGT) are used as a driving transistor in an AMOLED pixel circuit and their performance is evaluated by simulation. It is found that the IGZO SGT is less sensitive to the trap densities in the channel layer than the IGZO TFT, including oxygen vacancy (OV) state peak values, the density of tail states at ${E}$ = ${E}_{C}$ , and OV state mean energies. The IGZO SGT is also much less affected by negative bias stress and positive bias stress than the IGZO TFT. In the AMOLED pixel circuit, the OLED current has less variation when the IGZO SGT is used as the driving transistor instead of the IGZO TFT. The work shows that the IGZO SGT is a promising alternative to the conventional TFT for applications in AMOLED pixel circuits.
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