Atomic layer deposition thin film techniques and its bibliometric perspective

Abstract Atomic layer deposition (ALD) is known for depositing ultra-thin film materials that enable control of composition, highly conformal film, desirable thickness, self-saturating, and uniform deposition, and this review has established its evolvement in recent times. The ALD techniques have made more device applications possible in energy storage, solar cells, memory storage, catalysis, sensors, and many more. Its advantages and disadvantages for different modes were emphasized and the precursors used for several ALD processes were highlighted. The bibliometric approach used in this review has also revealed how ALD has evolved through the assessment of published documents, journals, authors, organizations, sponsors, and countries. The method also revealed that ALD research is limited in Africa, however, the first two ALD facilities were confirmed to be acquired by T.C. Jen at the University of Johannesburg, which will in turn burst ALD material research in Africa. The current study has provided researchers with a choice when considering using the ALD technique and in terms of research collaborations. It concluded by highlighting the challenges and future perspectives of ALD and bibliometric technique.